Tianjin Huanou Semiconductor Material Technology Co., Ltd. R&D building
Tianjin Huanou Semiconductor Material Technology Co., Ltd. R&D building is located at No. 12, Haitai East Road, Tianjin Huayuan Science and Technology Park (outer ring).
The project covers an area of 1,7427.6 square meters, with a total construction area of 57,983.38 square meters. It includes two 16-story R&D buildings, a 2-story canteen and a guardhouse. The basement used as is a garage and equipment room.
The building under construction is used for the company's CFZ-DW R&D project and office.
Tianjin Huanou Semiconductor Material Technology Co., Ltd. is one of the earliest professional manufacturers of semiconductor materials in China, with more than 50 years of semiconductor material production history and professional experience.
The R&D building project of Huanou Company used Binhai Aotai "OTAi"® polymer self-adhesive membrane waterproofing membrane and root penetration resistant polyvinyl chloride (PVC) waterproofing membrane in the waterproof construction.
"OTAi"® polymer self-adhesive film waterproofing membrane won the title of "Tianjin Key New Product". According to the "Technical Regulations for Underground Engineering Waterproofing" GB50108-2008, single-layer use can achieve level one waterproofing fortification.
In the Tianjin area, this product is widely used in key municipal projects such as the Binhai New Area Cultural Center, Tianjin Metro Line B1, seawater desalination, and China-Singapore Tianjin Eco-City.
"OTAi"® polyvinyl chloride (PVC) waterproofing membrane passed the root puncture test of Beijing Academy of Landscape Science in 2014. It is the most cost-effective polymer root-resistant polymer for roof gardens, roof farms, underground spaces and other planting roofs in urban construction. This product has good performance in the underground space of Tianjin Airport Transportation Hub and Binhai High-speed Railway Station.
Tianjin OTAi will continue to provide excellent products and high-quality services for our customers.